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IRF3707ZCLPBF

Part No IRF3707ZCLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 59A TO-262
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 25μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1210pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046461-IRF3707ZCLPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRF3707ZCLPBF CAD Model

Description

The Infineon Technologies IRF3707ZCLPBF is an N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 59A at 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 59A @ 25°C
  • Maximum Gate Charge: 15nC @ 4.5V
  • Maximum Input Capacitance: 1210pF @ 15V
  • Package: TO-262
  • Operating Temperature Range: -55°C to 175°C
  • Applications: Discrete semiconductor products
  • Status: Obsolete
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9653 $57.9180
150+ $0.7921 $118.8150
230+ $0.7673 $176.4790
315+ $0.7426 $233.9190
405+ $0.7179 $290.7495
540+ $0.6436 $347.5440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,719 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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