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Same model may have multiple batches, images only for reference.
IRF3707ZS
Same model may have multiple batches, images only for reference.

IRF3707ZS

Part No IRF3707ZS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 59A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 30V 59A
Datasheet
IRF3707ZS Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 25μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1210pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 093200-IRF3707ZS
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF3707ZS
Introduction Date December 04, 2003
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF3707ZS CAD Model

Description

The Infineon Technologies IRF3707ZS is a N-channel MOSFET transistor that is commonly used in the electronics industry.

  • Maximum Power Dissipation: 57W @ Tc
  • Drive Voltage: 4.5V
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 59A (Tc)
  • Maximum Rds On @ Id,Vgs: 9.5 mOhm @ 21A, 10V
  • Maximum Gate Charge: 15nC @ 4.5V
  • Maximum Input Capacitance: 1210pF @ 15V

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Quantity Unit Price Ext. Price
30+ $1.8918 $56.7540
65+ $1.5523 $100.8995
100+ $1.5038 $150.3800
140+ $1.4553 $203.7420
180+ $1.4068 $253.2240
240+ $1.2612 $302.6880
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