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Same model may have multiple batches, images only for reference.
IRF3711ZS
Same model may have multiple batches, images only for reference.

IRF3711ZS

Part No IRF3711ZS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 92A D2PAK
Datasheet
IRF3711ZS Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.45V @ 250μA
Max Gate Charge 24nC @ 4.5V
Max Input Capacitance 2150pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 115513-IRF3711ZS
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3711ZS CAD Model

Description

The Infineon Technologies IRF3711ZS is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 92A @ 25°C
  • Maximum Rds On: 6 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 2.45V @ 250μA

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Quantity Unit Price Ext. Price
170+ $0.3430 $58.3100
410+ $0.2818 $115.5380
640+ $0.2726 $174.4640
875+ $0.2645 $231.4375
1,135+ $0.2553 $289.7655
1,520+ $0.2287 $347.6240
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Availability: 2,880 pieces
MOQ: 170 pcs
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