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Same model may have multiple batches, images only for reference.
IRF3708S Real Image
Same model may have multiple batches, images only for reference.

IRF3708S

Part No IRF3708S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 62A D2PAK
Datasheet
IRF3708S Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 24nC @ 4.5V
Max Input Capacitance 2417pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 87W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046469-IRF3708S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF3708S CAD Model

Description

The Infineon Technologies IRF3708S is a N-Channel MOSFET that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 87W
  • Continuous Drain Current: 62A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 24nC @ 4.5V
  • Maximum Input Capacitance: 2417pF @ 15V
  • Maximum Rds On @ Id,Vgs: 12 mOhm @ 15A, 10V
  • Packaging: Tube/rail
  • Suitable for: Use in discrete semiconductor products.

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