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IRF3709ZSTRRPBF

Part No IRF3709ZSTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 30V 87A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 2130pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 6.3 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046480-IRF3709ZSTRRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF3709
Introduction Date July 02, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRF3709ZSTRRPBF CAD Model

Description

The Infineon Technologies IRF3709ZSTRRPBF is an N-Channel MOSFET transistor that operates at a maximum power dissipation of 79W (Tc).

  • Maximum Power Dissipation: 79W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 87A (Tc)
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Gate Charge: 26nC @ 4.5V
  • Maximum Input Capacitance: 2130pF @ 15V
  • Maximum Rds On @ Id,Vgs: 6.3 mOhm @ 21A, 10V
  • Package: D2PAK, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.3429 $50.1435
37+ $2.7429 $101.4873
57+ $2.6571 $151.4547
78+ $2.5714 $200.5692
101+ $2.4857 $251.0557
135+ $2.2286 $300.8610
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Availability: 5,870 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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