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Same model may have multiple batches, images only for reference.
IRF3710ZGPBF Real Image
Same model may have multiple batches, images only for reference.

IRF3710ZGPBF

Part No IRF3710ZGPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 59A TO-220AB
Datasheet
IRF3710ZGPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250mA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046482-IRF3710ZGPBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRF3710ZGPBF CAD Model

Description

The Infineon Technologies IRF3710ZGPBF is an obsolete electronic component that has reached its end of life.

  • Power Dissipation (Max): 160W
  • Voltage - Drain to Source Breakdown (Vdss): 100V
  • Package / Case: TO-220AB
  • Gate-Source Voltage: ±20V
  • Lifecycle Status: Obsolete (EOL)

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