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Same model may have multiple batches, images only for reference.
IRF3710ZSTRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF3710ZSTRRPBF

Part No IRF3710ZSTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 59A D2PAK
Datasheet
IRF3710ZSTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046484-IRF3710ZSTRRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3710ZSTRRPBF CAD Model

Description

The Infineon Technologies IRF3710ZSTRRPBF is an N-Channel MOSFET technology discrete semiconductor product.

  • Maximum Power Dissipation: 160W (Tc)
  • Package: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 59A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 120nC @ 10V
  • Maximum Input Capacitance: 2900pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 18 mOhm @ 35A, 10V
  • Supply and Demand Status: Balanced

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