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IRF3711STRLPBF

Part No IRF3711STRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 110A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 44nC @ 4.5V
Max Input Capacitance 2980pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046486-IRF3711STRLPBF
Family Name IRF3711
Introduction Date March 01, 2004
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3711STRLPBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance electronic component designed for discrete semiconductor products.

  • Polarity: N-Channel
  • Power Dissipation: 3.1W (Ta), 120W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Case/Package: D2PAK
  • Mounting Technology: SMD (SMT)
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3696 $59.1360
385+ $0.3038 $116.9630
590+ $0.2945 $173.7550
815+ $0.2841 $231.5415
1,055+ $0.2749 $290.0195
1,405+ $0.2472 $347.3160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,730 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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