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Same model may have multiple batches, images only for reference.
IRF4104PBF
Same model may have multiple batches, images only for reference.

IRF4104PBF

Part No IRF4104PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 75A TO-220AB
Datasheet
IRF4104PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 3000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069285-IRF4104PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF4104PBF CAD Model

Description

The Infineon Technologies IRF4104PBF is a powerful N-channel MOSFET transistor designed for use in high-power electronic circuits.

  • Maximum Power Dissipation: 140W (Tc)
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 40V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 5.5 mOhm @ 75A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3705 $50.0175
330+ $0.3040 $100.3200
510+ $0.2945 $150.1950
705+ $0.2850 $200.9250
910+ $0.2755 $250.7050
1,215+ $0.2470 $300.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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