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IRF520VSTRRPBF

Part No IRF520VSTRRPBF
Manufacturer Infineon Technologies
Catalog OEM Parts (F - I)
Description 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Sample
Rohs State rohs
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RoHS Non-Compliant
Win Source Part Number 980081-IRF520VSTRRPBF
Categories OEM Parts(F-I)
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF520VSTRRPBF CAD Model

Description

The IRF520VSTRRPBF is a power MOSFET from Infineon Technologies, belonging to their automotive-qualified MOSFET family. This device is designed for high-performance switching applications in automotive and industrial environments. It offers a combination of low on-resistance, fast switching speed, and robust design, making it suitable for demanding applications. The "TRRPBF" suffix indicates it's tape and reel packaged and lead-free.

Applications:

  • Automotive Power Management: Used in electronic power steering (EPS), anti-lock braking systems (ABS), and other automotive control units.
  • Motor Control: Driving DC motors in automotive and industrial applications.
  • DC-DC Converters: Efficiently converting voltage levels in automotive and industrial power systems.
  • Lighting Control: Switching and dimming automotive and industrial lighting systems.
  • Load Switching: General-purpose switching of resistive and inductive loads in various applications.

Features:

  • Automotive Qualified: Meets stringent automotive quality and reliability standards.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses and improves efficiency.
  • Fast Switching Speed: Reduces switching losses and enhances overall system performance.
  • Avalanche Rated: Can withstand transient voltage spikes without damage.
  • Logic-Level Gate Drive: Operates directly with logic-level control signals.
  • Surface Mount Package (D2PAK): Facilitates efficient PCB assembly and space utilization.
  • Lead-Free: Compliant with RoHS environmental regulations.

Benefits:

  • High Reliability: Automotive qualification ensures robust performance in harsh environments.
  • Improved Efficiency: Low on-resistance minimizes power dissipation, enhancing system efficiency.
  • Simplified Design: Logic-level gate drive streamlines interface with microcontrollers and other control circuits.
  • Reduced Heat Generation: Efficient power conversion minimizes heat dissipation, extending component lifespan.
  • Compliance: Lead-free construction meets environmental regulations.

Additional Details:

The IRF520VSTRRPBF has a drain-source voltage (VDS) of 100V, a continuous drain current (ID) of 9.2A, and a pulsed drain current (IDM) of 37A. The typical gate threshold voltage (VGS(th)) is 4V. It is packaged in a D2PAK (TO-263) package. It is designed to operate within a temperature range of -55°C to +175°C. This MOSFET is specifically designed to offer ruggedness and reliability in automotive applications, offering superior performance compared to standard MOSFETs.

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