The Infineon Technologies IRF5803D2TRPBF is a P-channel MOSFET transistor with a Schottky diode (isolated) feature.

• Drain-Source Breakdown Voltage: 40V
• Continuous Drain Current (25°C): 3.4A @ 25°C
• Maximum Rds on (Id, Vgs): 112 mOhm @ 3.4A, 10V
• Maximum Gate-Source Voltage: ±20V
• Gate-Source Threshold Voltage: 3V @ 250μA
• Maximum Input Capacitance: 1110pF @ 25V
• Maximum Gate Charge: 37nC @ 10V
• Case/Package: 8-SO package with a dimension of 8-SOIC (0.154", 3.90mm width)
• Family: IRF5803D2
• Category: discrete semiconductor products
• Supply and Demand Status: common-used part with high popularity and sufficient supply and demand status
• Estimated EOL Date: obsolete/end of life
• Alternative Parts: IRF5803D2TR, IRF5803D2, and IRF5803D2PbF