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Same model may have multiple batches, images only for reference.
IRF2907ZSTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRF2907ZSTRLPBF

Part No IRF2907ZSTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 75A D2PAK
Datasheet
IRF2907ZSTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 270nC @ 10V
Max Input Capacitance 7500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 135581-IRF2907ZSTRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF2907ZSTRLPBF CAD Model

Description

The Infineon Technologies IRF2907ZSTRLPBF is a N-Channel MOSFET that is commonly used in power management.

  • Maximum Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 160A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 4.5 mOhm @ 75A, 10V
  • Supply and Demand Status: limited

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Quantity Unit Price Ext. Price
30+ $2.0630 $61.8900
70+ $1.6928 $118.4960
110+ $1.6399 $180.3890
150+ $1.5870 $238.0500
190+ $1.5341 $291.4790
255+ $1.3754 $350.7270
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Availability: 3,458 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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