The Infineon Technologies MOSFET is a discrete semiconductor product that is packaged in a Micro6(TSOP-6) case/package.

• GPTDescription: It is a P-channel polarity MOSFET with a power dissipation (maximum) of 2W.
• GPTDescription: The drive voltage (max Rds On, min Rds On) is 4.5V, 10V.
• GPTDescription: This product is now obsolete and has a low popularity.
• GPTDescription: The Infineon Technologies MOSFET has a Vds - Drain-Source Breakdown Voltage of 40V and an Id - Continuous Drain Current of 3.4A.
• GPTDescription: The Rds On (maximum) @ Id, Vgs is 112mOhm @ 3.4A, 10V.
• GPTDescription: The gate source voltage(th) (maximum) @ Id is 3V @ 250μA, and the gate charge (Qg) (maximum) @ Vgs is 37nC @ 10V.
• GPTDescription: The gate source voltage (maximum) is ±20V, and the input capacitance (Ciss) (maximum) @ Vds is 1110pF @ 25V.