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IRF5NJ540SCX

Part No IRF5NJ540SCX
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 16 A
Drain to Source Breakdown Voltage 100 V
Fall Time 82 ns
Gate to Source Voltage (Vgs) 20 V
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
On-State Resistance 100 mΩ
Packaging Bulk
Power Dissipation 75 W
Radiation Hardening No
Rise Time 125 ns
RoHS Compliant
Turn-Off Delay Time 86 ns
Turn-On Delay Time 24 ns
Win Source Part Number 1190625-IRF5NJ540SCX
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF5NJ540SCX CAD Model

Description

The IRF5NJ540SCX is an RF MOSFET transistor from Infineon Technologies.

  • Type: RF MOSFET
  • Mounting Type: Surface Mount
  • Packaging: Bulk
  • RoHS Compliant: Yes
  • Power Dissipation: 75W
  • Number of Pins: 3
  • Continuous Drain Current (ID): 16A
  • Drain-to-Source Breakdown Voltage: 100V
  • On-State Resistance: 100mΩ
  • Turn-On Delay Time: 24ns
  • Turn-Off Delay Time: 86ns
  • Gate-to-Source Voltage (Vgs): 20V
  • Rise Time: 125ns
  • Fall Time: 82ns
  • Temperature Range: -55°C to 150°C
  • Radiation Hardened: No

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