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Same model may have multiple batches, images only for reference.
IRF5NJ9540
Same model may have multiple batches, images only for reference.

IRF5NJ9540

Part No IRF5NJ9540
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Termination SMD/SMT
Continuous Drain Current (ID) -11 A
Drain to Source Breakdown Voltage -100 V
Drain to Source Resistance 117 mΩ
Drain to Source Voltage (Vdss) 100 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Maximum Operating Temperature 150 °C
Manufacturer Package Identifier SMT-0.5
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
On-State Resistance 100 mΩ
Power Dissipation 75 W
Radiation Hardening No
RoHS Compliant
Schedule B 8541290080
Win Source Part Number 1015625-IRF5NJ9540
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF5NJ9540 CAD Model

Description

The Infineon Technologies 1015625-IRF5NJ9540 is a SMD/SMT termination MOSFET transistor with a drain to source voltage (Vdss) of 100 V and a power dissipation of 75 W.

  • Drain to Source Voltage (Vdss): 100 V
  • Power Dissipation: 75 W
  • Continuous Drain Current (ID): -11 A
  • Drain to Source Breakdown Voltage: -100 V
  • Gate to Source Voltage (Vgs): 20 V
  • On-State Resistance: 100 mΩ
  • Application: Transistors - FETs, MOSFETs - RF
  • RoHS: Compliant but contains lead
  • Package Identifier: SMT-0.5

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