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IPB60R099CPAATMA1

Part No IPB60R099CPAATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 31A TO263-3  /  N-Channel 600 V 31A (Tc) 255W (Tc) Surface Mount PG-TO263-3-2
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 100 V
Power Dissipation (Max) 255W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB60R099
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-IPB60R099CPAATMA1DKR,IPB60R099CPAATMA1TR,IPB60R099CPAATMA1TR-ND,448-IPB60R099CPAATMA1TR,SP000315443,IPB60R099CPA,IPB60R099CPA-ND,448-IPB60R099CPAATMA1CT
Standard Package 1,000
Win Source Part Number 1065221-IPB60R099CPAATMA1
Ultra Librarian 3D Model Ultra Librarian IPB60R099CPAATMA1 CAD Model

Description

The IPB60R099CPAATMA1 is a CoolMOS™ MOSFET transistor from Infineon Technologies.

  • FET Type: N-channel FET
  • Drain to Source Voltage: 600V
  • Continuous Drain Current @ 25°C: 31A
  • On-Resistance: 105mOhm
  • Gate Charge: 80nC @ 10V
  • Series: CoolMOS™
  • Package: TO-263-3, D²Pak
  • Leads: 2 leads and a tab

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $8.0563 $64.4504
18+ $6.6103 $118.9854
28+ $6.4038 $179.3064
38+ $6.1972 $235.4936
49+ $5.9907 $293.5443
65+ $5.3709 $349.1085
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,100 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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