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Same model may have multiple batches, images only for reference.
IRF6201TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF6201TRPBF

Part No IRF6201TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 27A 8-SOIC
Datasheet
IRF6201TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 27A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 100μA
Max Gate Charge 195nC @ 4.5V
Max Input Capacitance 8555pF @ 16V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 2.45 mOhm @ 27A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046528-IRF6201TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6201TRPBF CAD Model

Description

The Infineon Technologies MOSFET, IRF6201TRPBF, is a N-Channel polarity transistor that can handle a maximum power dissipation of 2.5W. Infineon Technologies IRF6201TRPBF.

  • Polarity: N-Channel
  • Maximum Power Dissipation: 2.5W
  • Package: 8-SOIC
  • Operating Temperature Range: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 27A
  • Gate-Source Threshold Voltage: 1.1V @ 100μA
  • Maximum Gate Charge: 195nC @ 4.5V
  • Maximum Input Capacitance: 8555pF @ 16V
  • Maximum Rds On @ Id,Vgs: 2.45 mOhm @ 27A, 4.5V
  • Supply and Demand Status: Balanced

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