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Same model may have multiple batches, images only for reference.
IRF630NLPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF630NLPBF

Part No IRF630NLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9.3A TO-262
Datasheet
IRF630NLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 575pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 82W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 5.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040688-IRF630NLPBF
Family Name IRF630
Introduction Date March 01, 2004
ECCN EAR99
Country of Origin Mexico
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF630NLPBF CAD Model

Description

The Infineon Technologies IRF630NLPBF is an N-Channel MOSFET transistor that is designed for use in a range of applications, including power management and switching circuits.

  • Maximum Power Dissipation: 82W @ Tc
  • Continuous Drain Current: 9.3A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 300 mOhm @ 5.4A and 10V
  • Package: TO-262
  • Mounting: Through-hole
  • Supply and Demand Status: Balanced

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