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IRF640NLPBF

Part No IRF640NLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 18A TO-262 / Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 67nC @ 10V
Max Input Capacitance 1160pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069304-IRF640NLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF640
Introduction Date January 08, 2004
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRF640NLPBF CAD Model

Description

The Infineon Technologies IRF640NLPBF is a N-Channel MOSFET with a drain-source breakdown voltage of 200V.

  • Continuous Drain Current: 18A (Tc) @ 25°C
  • Maximum Rds On: 150 mOhm @ 11A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 67nC @ 10V
  • Package: TO-262 case
  • Power Dissipation: 150W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: balanced
  • Estimated EOL Date: 2027

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6146 $56.5110
80+ $1.3248 $105.9840
120+ $1.2834 $154.0080
165+ $1.2420 $204.9300
210+ $1.2006 $252.1260
280+ $1.0764 $301.3920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 950 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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