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IRF640NPBF

Part No IRF640NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 18A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 67nC @ 10V
Max Input Capacitance 1160pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017455-IRF640NPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IRF640
Introduction Date March 01, 2004
ECCN EAR99
Country of Origin Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRF640NPBF CAD Model

Description

The Infineon Technologies IRF640NPBF is an N-Channel MOSFET discrete semiconductor product that is suitable for power management applications.

  • Supply and Demand Status: sufficient
  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 017455
  • Product Category: Discrete Semiconductor Products
  • Maximum Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 18A @ 25°C
  • Introduction Date: March 01, 2004
  • Estimated EOL Date: 2024

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2495 $51.1475
430+ $0.2337 $100.4910
665+ $0.2258 $150.1570
955+ $0.2100 $200.5500
1,240+ $0.2022 $250.7280
1,545+ $0.1943 $300.1935
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 138,390 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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