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Same model may have multiple batches, images only for reference.
IRF6611TR1
Same model may have multiple batches, images only for reference.

IRF6611TR1

Part No IRF6611TR1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 32A DIRECTFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 32A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 56nC @ 4.5V
Max Input Capacitance 4860pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.9W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 2.6 mOhm @ 27A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 131890-IRF6611TR1
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian IRF6611TR1 CAD Model

Description

The Infineon Technologies IRF6611TR1 is a N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 32A @ 25°C and 150A @ Tc
  • Maximum Rds On at Id,Vgs: 2.6 mOhm @ 27A, 10V
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Gate Charge: 56nC @ 4.5V
  • Maximum Input Capacitance: 4860pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Package: DirectFET Isometric MX
  • Mounting: SMD (SMT)
  • Power Dissipation: 3.9W (Ta), 89W (Tc)
  • Temperature Range: -40°C to 150°C (TJ)

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