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Same model may have multiple batches, images only for reference.
IRF6616TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF6616TRPBF

Part No IRF6616TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 40V 19A 7-Pin Direct-FET MX T/R / MOSFET N-CH 40V 19A DIRECTFET
Datasheet
IRF6616TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 19A (Ta), 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 44nC @ 4.5V
Max Input Capacitance 3765pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 19A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 1046554-IRF6616TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF6616
Introduction Date May 23, 2007
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRF6616TRPBF CAD Model

Description

The 1046554-IRF6616TRPBF is a high-performance N-Channel MOSFET designed for use in a wide range of applications manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 19A (Ta), 106A (Tc)
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Gate Charge: 44nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 5 mOhm @ 19A, 10V
  • Package: DIRECTFET MX
  • Temperature Range: -40°C to 150°C (TJ)

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44+ $2.2858 $100.5752
68+ $2.2143 $150.5724
94+ $2.1429 $201.4326
121+ $2.0715 $250.6515
162+ $1.8572 $300.8664
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