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Same model may have multiple batches, images only for reference.
IRF6617TR1PBF
Same model may have multiple batches, images only for reference.

IRF6617TR1PBF

Part No IRF6617TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A DIRECTFET
Datasheet
IRF6617TR1PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1300pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 8.1 mOhm @ 15A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET ST
Dimension DirectFET Isometric ST
Win Source Part Number 122533-IRF6617TR1PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6617TR1PBF CAD Model

Description

The Infineon Technologies IRF6617TR1PBF is a N-channel MOSFET transistor that can handle a power dissipation of up to 2.1W (Ta) and 42W (Tc).

  • Product Category: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 14A (Ta), 55A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.35V @ 250μA
  • Maximum Gate Charge: 17nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 8.1 mOhm @ 15A, 10V
  • Case/Package: DIRECTFET ST
  • Dimension: DirectFET Isometric ST
  • Lifecycle Status: Obsolete and has an EOL status.

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