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Same model may have multiple batches, images only for reference.
IRF6619 Real Image
Same model may have multiple batches, images only for reference.

IRF6619

Part No IRF6619
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 30A DIRECTFET
Datasheet
IRF6619 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 30A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.45V @ 250μA
Max Gate Charge 57nC @ 4.5V
Max Input Capacitance 5040pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 30A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 1046555-IRF6619
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4,800
Ultra Librarian 3D Model Ultra Librarian IRF6619 CAD Model

Description

The Infineon Technologies 458088 is a N-Channel MOSFET with a DirectFET MX package. Infineon Technologies 458088.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 30A (Ta), 150A (Tc)
  • Gate-Source Threshold Voltage: 2.45V @ 250μA
  • Maximum Gate Charge: 57nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 2.2 mOhm @ 30A, 10V
  • Category: Discrete Semiconductor Products
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)

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Availability: 6,220 pieces
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