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Same model may have multiple batches, images only for reference.
FDD2570 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDD2570

Part No FDD2570
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 4.7A D-PAK
Datasheet
FDD2570 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 1907pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.2W (Ta), 70W (Tc)
Maximum Rds On at Id,Vgs 80 mOhm @ 4.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038054-FDD2570
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDD2570 CAD Model

Description

The Fairchild/ON Semiconductor FDD2570 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 150V and a continuous drain current of 4.7A @ 25°C.

  • Maximum Rds On @ Id, Vgs: 80 mOhm @ 4.7A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 62nC @ 10V
  • Package: TO-252
  • Category: Discrete semiconductor products
  • Status: Obsolete

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