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Same model may have multiple batches, images only for reference.
RQ3E100GNTB Real Image
Same model may have multiple batches, images only for reference.

RQ3E100GNTB

Part No RQ3E100GNTB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10A 8-HSMT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 7.9nC @ 10V
Max Input Capacitance 420pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 15W (Tc)
Maximum Rds On at Id,Vgs 11.7 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HSMT (3.2x3)
Dimension 8-PowerVDFN
Win Source Part Number 1092617-RQ3E100GNTB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RQ3E100GNTB CAD Model

Description

The Rohm Semiconductor RQ3E100GNTB is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Manufacturer: Rohm Semiconductor
  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 10A (Ta)
  • Maximum Rds On @ Id,Vgs: 11.7 mOhm @ 10A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Mounting: SMD (SMT)
  • Package: 8-HSMT (3.2x3)
  • Maximum Power Dissipation: 2W (Ta), 15W (Tc)
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
260+ $0.2225 $57.8500
635+ $0.1826 $115.9510
980+ $0.1769 $173.3620
1,350+ $0.1712 $231.1200
1,745+ $0.1656 $288.9720
2,340+ $0.1483 $347.0220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,490 pieces
MOQ: 260 pcs
Order Increment : 1 pcs
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