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IRF6637TR1PBF

Part No IRF6637TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A DIRECTFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1330pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.3W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 7.7 mOhm @ 14A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MP
Dimension DirectFET Isometric MP
Win Source Part Number 121756-IRF6637TR1PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF6637TR1PBF CAD Model

Description

The Infineon Technologies IRF6637TR1PBF is an N-Channel MOSFET that is designed for use in a variety of applications.

  • Maximum Power Dissipation: 2.3W
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 2.35V @ 250μA
  • Maximum Gate Charge: 17nC @ 4.5V
  • Package: housed in a DirectFET MP package
  • Maximum Rds On: 7.7 mOhm @ 14A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.7546 $57.8466
52+ $2.2603 $117.5356
80+ $2.1896 $175.1680
110+ $2.1190 $233.0900
141+ $2.0483 $288.8103
189+ $1.8365 $347.0985
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,700 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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