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IRF6645

Part No IRF6645
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 5.7A DIRECTFET
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 25 V
Power Dissipation (Max) 3W (Ta), 42W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ SJ
Package / Case DirectFET™ Isometric SJ
Standard Package 4,800 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 159752-IRF6645
Ultra Librarian 3D Model Ultra Librarian IRF6645 CAD Model

Description

The IRF6645 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET series
  • Application: designed for use in discrete semiconductor products and is commonly used in power management applications
  • Drain to Source Voltage: 100V
  • Continuous Drain Current @ 25°C: 5.7A
  • On-Resistance: low on-resistance of 35mOhm
  • Gate Threshold Voltage: 4.9V
  • Power Dissipation: 3W
  • Package: surface mount package
  • Gate Charge: 20nC
  • Status: obsolete product, but it is still available in the market

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8254 $53.6510
130+ $0.7732 $100.5160
205+ $0.7471 $153.1555
290+ $0.6948 $201.4920
375+ $0.6687 $250.7625
470+ $0.6426 $302.0220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 88,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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