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Same model may have multiple batches, images only for reference.
SI3447BDV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3447BDV-T1-E3

Part No SI3447BDV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 4.5A 6-TSOP
Datasheet
SI3447BDV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 14nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 097067-SI3447BDV-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI3447BDV-T1-E3 CAD Model

Description

The Vishay SI3447BDV-T1-E3 is a P-channel MOSFET with a maximum power dissipation of 1.1W (Ta).

  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 4.5A (Ta)
  • Maximum Rds On: 40 mOhm @ 6A, 4.5V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 14nC @ 4.5V
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Status: obsolete (EOL)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Suitable for: use in discrete semiconductor products

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