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Same model may have multiple batches, images only for reference.
IRF6645TR1PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF6645TR1PBF

Part No IRF6645TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 5.7A DIRECTFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 5.7A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.9V @ 50μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 890pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 5.7A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET SJ
Dimension DirectFET Isometric SJ
Win Source Part Number 118359-IRF6645TR1PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6645TR1PBF CAD Model

Description

The Infineon Technologies MOSFET is a discrete semiconductor product that is designed for use in various electronic devices.

  • Polarity Type: N-Channel polarity type
  • Power Dissipation: 2.2W (Ta), 42W (Tc)
  • Package: packaged in a reel-TR
  • Mounting: mounted in SMD (SMT) technology
  • Status: obsolete (EOL)
  • Temperature Range: -40°C to 150°C (TJ)
  • Manufacturer: Infineon Technologies

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8254 $53.6510
130+ $0.7732 $100.5160
205+ $0.7471 $153.1555
290+ $0.6948 $201.4920
375+ $0.6687 $250.7625
470+ $0.6426 $302.0220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 83,910 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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