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Same model may have multiple batches, images only for reference.
IRF6678TR1
Same model may have multiple batches, images only for reference.

IRF6678TR1

Part No IRF6678TR1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A DIRECTFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 65nC @ 4.5V
Max Input Capacitance 5640pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 30A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 109098-IRF6678TR1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian IRF6678TR1 CAD Model

Description

The Infineon Technologies IRF6678TR1 is an obsolete (EOL) N-Channel MOSFET transistor that can handle a maximum power dissipation of 2.8W (Ta), 89W (Tc).

  • Package: available in DIRECTFET MX package and has a DirectFET Isometric MX dimension
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 30A (Ta), 150A (Tc)
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Gate Charge: 65nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 2.2 mOhm @ 30A, 10V
  • Supply and Demand Status: balanced
  • Quantity per Package: 1k pcs

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Quantity Unit Price Ext. Price
40+ $1.5640 $62.5600
95+ $1.2834 $121.9230
140+ $1.2432 $174.0480
195+ $1.2032 $234.6240
250+ $1.1630 $290.7500
335+ $1.0427 $349.3045
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Availability: 3,763 pieces
MOQ: 40 pcs
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