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Same model may have multiple batches, images only for reference.
IRF6712STR1PBF
Same model may have multiple batches, images only for reference.

IRF6712STR1PBF

Part No IRF6712STR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 17A DIRECTFET
Datasheet
IRF6712STR1PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 17A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 50μA
Max Gate Charge 18nC @ 4.5V
Max Input Capacitance 1570pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 36W (Tc)
Maximum Rds On at Id,Vgs 4.9 mOhm @ 17A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET SQ
Dimension DirectFET Isometric SQ
Win Source Part Number 122305-IRF6712STR1PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6712STR1PBF CAD Model

Description

The 122305-IRF6712STR1PBF is an N-Channel MOSFET from Infineon Technologies.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 17A (Ta), 68A (Tc)
  • Maximum Rds On at Id,Vgs: 4.9 mOhm @ 17A, 10V
  • Gate-Source Threshold Voltage: 2.4V @ 50μA
  • Max Gate Charge: 18nC @ 4.5V
  • Package: DIRECTFET SQ case
  • Suitable for use in: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.3902 $50.7260
275+ $0.3651 $100.4025
430+ $0.3525 $151.5750
615+ $0.3273 $201.2895
795+ $0.3147 $250.1865
995+ $0.3021 $300.5895
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,620 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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