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Same model may have multiple batches, images only for reference.
IRF6795MTR1PBF Real Image
Same model may have multiple batches, images only for reference.

IRF6795MTR1PBF

Part No IRF6795MTR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 32A DIRECTFET
Datasheet
IRF6795MTR1PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 32A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 100μA
Max Gate Charge 53nC @ 4.5V
Max Input Capacitance 4280pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 75W (Tc)
Maximum Rds On at Id,Vgs 1.8 mOhm @ 32A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 1046569-IRF6795MTR1PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6795MTR1PBF CAD Model

Description

The Infineon Technologies IRF6795MTR1PBF is a N-Channel MOSFET that is designed to handle high power dissipation of up to 2.8W (Ta) and 75W (Tc).

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 32A (Ta), 160A (Tc)
  • Gate-Source Threshold Voltage: 2.35V @ 100μA
  • Maximum Gate Charge: 53nC @ 4.5V
  • Maximum Input Capacitance: 4280pF @ 13V
  • Package: DirectFET MX
  • Mounting Type: SMD (SMT)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7489 $59.9120
190+ $0.6146 $116.7740
295+ $0.5953 $175.6135
405+ $0.5761 $233.3205
520+ $0.5569 $289.5880
695+ $0.4993 $347.0135
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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