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Same model may have multiple batches, images only for reference.
IRF7105PBF
Same model may have multiple batches, images only for reference.

IRF7105PBF

Part No IRF7105PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 25V 8-SOIC
Datasheet
IRF7105PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 3.5A, 2.3A
Maximum Rds On at Id,Vgs 100 mOhm @ 1A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 330pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 126692-IRF7105PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7105PBF CAD Model

Description

The IRF7105PBF is a N and P-Channel MOSFET transistor from Infineon Technologies with an 8-SO case/package.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 3.5A, 2.3A
  • Maximum Rds On at Id,Vgs: 100 mOhm @ 1A, 10V
  • Category: Discrete Semiconductor Products
  • Status: not for new designs
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2214 $50.9220
485+ $0.2072 $100.4920
750+ $0.2000 $150.0000
1,080+ $0.1857 $200.5560
1,400+ $0.1786 $250.0400
1,750+ $0.1715 $300.1250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,290 pieces
MOQ: 230 pcs
Order Increment : 1 pcs
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