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Same model may have multiple batches, images only for reference.
IRF7304QTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7304QTRPBF

Part No IRF7304QTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 4.3A 8SOIC
Datasheet
IRF7304QTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.3A
Maximum Rds On at Id,Vgs 90 mOhm @ 2.2A, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 22nC @ 4.5V
Max Input Capacitance 610pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046589-IRF7304QTRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian IRF7304QTRPBF CAD Model

Description

The Infineon Technologies 1046589-IRF7304QTRPBF is a dual P-Channel MOSFET transistor with a logic level gate.

  • Product: MOSFET Transistor
  • Manufacturer: Infineon Technologies
  • Channel: Dual P-Channel
  • Gate: Logic Level
  • Power Dissipation: 2W
  • Continuous Drain Current: 4.3A @ 25°C
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Gate Charge: 22nC @ 4.5V
  • Input Capacitance: 610pF @ 15V
  • Package: 8-SO
  • Application: Discrete Semiconductor Products
  • Supply and Demand Status: Balanced

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