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Same model may have multiple batches, images only for reference.
IRF7306PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7306PBF

Part No IRF7306PBF
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description HEXFET®Power MOSFET | MOSFET 2P-CH 30V 3.6A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity 2 P-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 3.6A
Rds On (Maximum) at Id, Vgs 100mOhm at 1.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 25nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 440pF at 25V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Family Part Number IRF7306PBF
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Win Source Part Number 1187189-IRF7306PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7306PBF CAD Model

Description

The Infineon Technologies IRF7306PBF is a dual P-channel MOSFET with a logic level gate feature.

  • Manufacturer: Infineon Technologies
  • Type: Dual P-Channel MOSFET
  • Gate Feature: Logic Level
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.6A
  • Maximum Power: 2W
  • Input Capacitance: 440pF @ 25V
  • Gate-Source Voltage Threshold: 1V @ 250μA
  • Gate Charge: 25nC @ 10V
  • Package: 8-SOIC
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4227 $59.1780
295+ $0.3954 $116.6430
455+ $0.3818 $173.7190
655+ $0.3545 $232.1975
850+ $0.3409 $289.7650
1,060+ $0.3273 $346.9380
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Availability: 15,940 pieces
MOQ: 140 pcs
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