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Same model may have multiple batches, images only for reference.
IRF7306QTRPBF
Same model may have multiple batches, images only for reference.

IRF7306QTRPBF

Part No IRF7306QTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 3.6A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.6A
Maximum Rds On at Id,Vgs 100 mOhm @ 1.8A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 440pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 127047-IRF7306QTRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian IRF7306QTRPBF CAD Model

Description

The Infineon Technologies IRF7306QTRPBF is a 2 P-Channel (Dual) MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 3.6A @ 25°C.

  • FET: maximum power dissipation of 2W
  • Package: 8-SO
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Rds On: 100 mOhm @ 1.8A and 10V
  • Commonly Used: industrial applications
  • Supply and Demand Status: balanced
  • Quantity Per Package: 1

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6052 $60.5200
235+ $0.4967 $116.7245
360+ $0.4816 $173.3760
500+ $0.4655 $232.7500
645+ $0.4505 $290.5725
860+ $0.4043 $347.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 62,100 pieces
MOQ: 100 pcs
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