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IRF7307QTRPBF

Part No IRF7307QTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.2A, 4.3A
Maximum Rds On at Id,Vgs 50 mOhm @ 2.6A, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 20nC @ 4.5V
Max Input Capacitance 660pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046593-IRF7307QTRPBF
Family Name IRF7307Q
Introduction Date July 23, 2007
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian IRF7307QTRPBF CAD Model

Description

The Infineon Technologies FET (Field-Effect Transistor) is a high-performance electronic component used in a variety of applications.

  • Channel: N and P-Channel
  • Gate: Logic Level
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On @ Id,Vgs: 50 mOhm @ 2.6A, 4.5V
  • Maximum Power Dissipation: 2W
  • Package: 8-SO
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 20nC @ 4.5V
  • Popularity: High
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $9.3405 $65.3835
14+ $8.7387 $122.3418
21+ $8.4373 $177.1833
30+ $7.8344 $235.0320
39+ $7.5329 $293.7831
48+ $7.2315 $347.1120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,100 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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Shipping Information

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