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Same model may have multiple batches, images only for reference.
IRF7317PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7317PBF

Part No IRF7317PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 8-SOIC
Datasheet
IRF7317PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.6A, 5.3A
Maximum Rds On at Id,Vgs 29 mOhm @ 6A, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 27nC @ 4.5V
Max Input Capacitance 900pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046603-IRF7317PBF
Family Name IRF7317
Introduction Date August 13, 2004
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7317PBF CAD Model

Description

The Infineon Technologies IRF7317PBF is an N and P-channel FET transistor with logic level gate feature.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 6.6A, 5.3A @ 25°C
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 27nC @ 4.5V
  • Maximum Input Capacitance: 900pF @ 15V
  • Maximum Rds On @ Id,Vgs: 29 mOhm @ 6A, 4.5V
  • Package: 8-SO
  • Mounting: SMD (SMT)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3538 $51.3010
305+ $0.3314 $101.0770
470+ $0.3202 $150.4940
675+ $0.2978 $201.0150
875+ $0.2866 $250.7750
1,090+ $0.2754 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 65,990 pieces
MOQ: 145 pcs
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