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Same model may have multiple batches, images only for reference.
IRF7324D1PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7324D1PBF

Part No IRF7324D1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.2A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 7.8nC @ 4.5V
Max Input Capacitance 260pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 270 mOhm @ 1.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046605-IRF7324D1PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7324D1PBF CAD Model

Description

The Infineon Technologies 1046605-IRF7324D1PBF is a P-Channel MOSFET transistor with a drain-source breakdown voltage of 20V and a continuous drain current of 2.2A (Ta).

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2.2A (Ta)
  • Maximum Rds On: 270 mOhm @ 1.2A, 4.5V
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Package: 8-SO
  • Maximum Power Dissipation: 2W (Ta)
  • Designed For: Discrete semiconductor products
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Sufficient
  • Status: Now Obsolete (EOL)

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280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
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1,035+ $0.3361 $347.8635
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