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IRF7335D1TR

Name: IRF7335D1TR
Brand: Infineon Technologies
SKU: 159883
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF7335D1TR
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET 2N-CH 30V 10A 14-SOIC
Datasheet	IRF7335D1TR Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Obsolete(EOL)
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Logic Level Gate
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	10A
Maximum Rds On at Id,Vgs	17.5 mOhm @ 10A, 4.5V
Gate-Source Threshold Voltage	1V @ 250μA
Max Gate Charge	20nC @ 4.5V
Max Input Capacitance	1500pF @ 15V
Maximum Power Dissipation	2W
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	14-SOIC
Win Source Part Number	205312-IRF7335D1TR
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian IRF7335D1TR CAD Model

Description

The Infineon Technologies FET with the Win Source Part Number 205312-IRF7335D1TR is a dual N-Channel asymmetrical FET.

Category: Discrete semiconductor product
Popularity: Medium
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A
Gate-Source Threshold Voltage: 1V @ 250μA
Maximum Rds on at Id,Vgs: 17.5 mOhm @ 10A, 4.5V
Package: Reel - TR
Mounting: SMD (SMT) technology
Maximum Gate Charge: 20nC @ 4.5V
Input Capacitance: 1500pF @ 15V
Operating Temperature: -55°C to 150°C (TJ)
Status: Obsolete (EOL)
Commonly Used In: Power management applications

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
95+	$0.6255	$59.4225
230+	$0.5133	$118.0590
350+	$0.4973	$174.0550
480+	$0.4813	$231.0240
625+	$0.4652	$290.7500
835+	$0.4171	$348.2785

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 4,000 pieces

MOQ: 95 pcs

Order Increment : 1 pcs

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