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IRF7343PBF

Part No IRF7343PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 55V 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 4.7A, 3.4A
Maximum Rds On at Id,Vgs 50 mOhm @ 4.7A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 740pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046616-IRF7343PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7343PBF CAD Model

Description

The Infineon Technologies IRF7343PBF is a N and P-Channel MOSFET with a maximum power dissipation of 2W.

  • Channel Type: N and P-Channel
  • Maximum Power Dissipation: 2W
  • Case/Package: 8-SO
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Rds On @ Id,Vgs: 50 mOhm @ 4.7A, 10V
  • Drive Voltage: Standard
  • Category: Discrete Semiconductor Products
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Gate Charge: 36nC @ 10V
  • Maximum Input Capacitance: 740pF @ 25V
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.2788 $50.1840
385+ $0.2612 $100.5620
595+ $0.2524 $150.1780
855+ $0.2347 $200.6685
1,110+ $0.2259 $250.7490
1,385+ $0.2171 $300.6835
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 43,560 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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