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Same model may have multiple batches, images only for reference.
IRF7416QTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7416QTRPBF

Part No IRF7416QTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 10A 8-SOIC
Datasheet
IRF7416QTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 1700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 5.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046640-IRF7416QTRPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian IRF7416QTRPBF CAD Model

Description

The IRF7416QTRPBF from Infineon Technologies is a P-channel MOSFET transistor with a maximum drain-source voltage of 30V and a continuous drain current of 10A.

  • Drain-Source Voltage: 30V
  • Continuous Drain Current: 10A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 92nC @ 10V
  • Maximum Input Capacitance: 1700pF @ 25V

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Quantity Unit Price Ext. Price
85+ $0.6861 $58.3185
210+ $0.5625 $118.1250
320+ $0.5452 $174.4640
440+ $0.5278 $232.2320
570+ $0.5105 $290.9850
760+ $0.4574 $347.6240
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