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Same model may have multiple batches, images only for reference.
IRF7478QPBF
Same model may have multiple batches, images only for reference.

IRF7478QPBF

Part No IRF7478QPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet, Power; N-ch; Vdss 60V; Rds(on) 26 Milliohms; Id 4.2A; SO-8; Pd 2.5W; Vgs +/-20V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SO
Continuous Drain Current (ID) 7 A
Drain to Source Breakdown Voltage 60 V
Drain to Source Resistance 30 mΩ
Drain to Source Voltage (Vdss) 60 V
Dual Supply Voltage 60 V
Fall Time 13 ns
Gate to Source Voltage (Vgs) 20 V
Height 1.4986 mm
Input Capacitance 1.74 nF
Length 4.9784 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 2.5 W
Min Operating Temperature -55 °C
Mount Surface Mount
Nominal Vgs 3 V
Number of Elements 1
Number of Pins 8
Power Dissipation 2.5 W
Radiation Hardening No
REACH SVHC No SVHC
Rise Time 2.6 ns
RoHS Compliant
Termination SMD/SMT
Turn-Off Delay Time 44 ns
Turn-On Delay Time 7.7 ns
Width 3.9878 mm
Win Source Part Number 1065516-IRF7478QPBF
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF7478QPBF CAD Model

Description

The Infineon Technologies IRF7478QPBF is a transistor that is designed for use in FETs, MOSFETs, and RF applications.

  • Drain to Source Voltage (Vdss): 60 V
  • Maximum Power Dissipation: 2.5 W
  • Case/Package: SO
  • Number of Pins: 8
  • Rise Time: 2.6 ns
  • Fall Time: 13 ns
  • Continuous Drain Current (ID): 7 A
  • Drain to Source Breakdown Voltage: 60 V
  • Gate to Source Voltage (Vgs): 20 V
  • Nominal Vgs: 3 V

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