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Same model may have multiple batches, images only for reference.
AOD3C50 Real Image
Same model may have multiple batches, images only for reference.

AOD3C50

Part No AOD3C50
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 3A TO252
Datasheet
AOD3C50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 662pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1016918-AOD3C50
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOD3C50 CAD Model

Description

The Alpha & Omega Semiconductor Inc. AOD3C50 is an N-Channel MOSFET transistor that comes in a TO-252, (D-Pak) case.

  • Case: TO-252, (D-Pak)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 3A @ 25°C
  • Maximum Rds On @ Id,Vgs: 1.4 Ohm @ 2.2A and 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Input Capacitance: 662pF @ 100V
  • Maximum Gate-Source Voltage: ±30V
  • Power Dissipation: 83W (Tc)
  • Suitable for: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5174 $59.5010
275+ $0.4246 $116.7650
425+ $0.4113 $174.8025
585+ $0.3980 $232.8300
755+ $0.3848 $290.5240
1,005+ $0.3449 $346.6245
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Availability: 32,500 pieces
MOQ: 115 pcs
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