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Same model may have multiple batches, images only for reference.
SPB21N10 Real Image
Same model may have multiple batches, images only for reference.

SPB21N10

Part No SPB21N10
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 21A D2PAK
Datasheet
SPB21N10 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 44μA
Max Gate Charge 38.4nC @ 10V
Max Input Capacitance 865pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 80 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101479-SPB21N10
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPB21N10 CAD Model

Description

The Infineon Technologies SPB21N10 is a N-Channel MOSFET, which is widely used in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 21A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 44μA
  • Max Gate Charge: 38.4nC @ 10V
  • Maximum Rds On @ Id,Vgs: 80 mOhm @ 15A, 10V
  • Supply and Demand: Sufficient

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