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Same model may have multiple batches, images only for reference.
IRF7507TR Real Image
Same model may have multiple batches, images only for reference.

IRF7507TR

Part No IRF7507TR
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET N/P-CH 20V MICRO8
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Status Obsolete
Transistor Polarity N and P-Channel
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 2.4A, 1.7A
Rds On (Maximum) at Id, Vgs 140mOhm at 1.7A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 700mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 260pF at 15V
Maximum Power 1.25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-TSSOP, 8-MSOP
Supplier Device Package Micro8
Family Part Number IRF7507
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 710503-IRF7507TR
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7507TR CAD Model

Description

The Infineon Technologies IRF7507TR is a logic level gate FET transistor with N and P-Channel polarity.

  • Polarity: N and P-Channel
  • Device Package: Micro8
  • Power: 1.25W
  • Vds: 20V
  • Continuous Drain Current: 2.4A and 1.7A
  • Gate-Source Voltage (th): 700mV @ 250μA
  • Input Capacitance (Ciss): 260pF @ 15V
  • Gate Charge (Qg): 8nC @ 4.5V
  • Manufacturer: Infineon Technologies

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