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Same model may have multiple batches, images only for reference.
IRF7507TRPBF
Same model may have multiple batches, images only for reference.

IRF7507TRPBF

Part No IRF7507TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 1.7A MICRO8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.4A, 1.7A
Maximum Rds On at Id,Vgs 140 mOhm @ 1.7A, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 8nC @ 4.5V
Max Input Capacitance 260pF @ 15V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Win Source Part Number 001895-IRF7507TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7507TRPBF CAD Model

Description

The Infineon Technologies IRF7507TRPBF is a N and P-Channel MOSFET with a logic level gate feature.

  • Category: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 2.4A, 1.7A
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Max Gate Charge: 8nC @ 4.5V
  • Max Input Capacitance: 260pF @ 15V
  • Maximum Rds On at Id,Vgs: 140 mOhm @ 1.7A, 4.5V
  • Supply and Demand Status: Balanced

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