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Same model may have multiple batches, images only for reference.
IRF7524D1TR Real Image
Same model may have multiple batches, images only for reference.

IRF7524D1TR

Part No IRF7524D1TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.7A MICRO8
Datasheet
IRF7524D1TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 8.2nC @ 4.5V
Max Input Capacitance 240pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 270 mOhm @ 1.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 1046679-IRF7524D1TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7524D1TR CAD Model

Description

The Infineon Technologies IRF7524D1TR is a P-channel MOSFET transistor with a drain-source breakdown voltage of 20V and a maximum continuous drain current of 1.7A @ 25°C.

  • MOSFET Type: P-channel
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 1.7A
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Input Capacitance: 240pF @ 15V
  • Maximum Rds On: 270 mOhm @ 1.2A, 4.5V
  • Package: Micro8
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)

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