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Same model may have multiple batches, images only for reference.
IRF7534D1TR
Same model may have multiple batches, images only for reference.

IRF7534D1TR

Part No IRF7534D1TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.3A MICRO8
Datasheet
IRF7534D1TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 15nC @ 5V
Max Input Capacitance 1066pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 55 mOhm @ 4.3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 001902-IRF7534D1TR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7534D1TR CAD Model

Description

The IRF7534D1TR MOSFET is a P-Channel Polarity electronic component designed for use in Discrete Semiconductor Products.

  • Power Dissipation (Max): 1.25W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 4.3A (Ta)
  • Package: Micro8
  • Family: MOSFET
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Max Gate Charge: 15nC @ 5V

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